Fan-out semiconductor package

ABSTRACT

A fan-out semiconductor package includes: a first connection member having a through-hole; a semiconductor chip disposed in the through-hole of the first connection member and having an active surface with connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first connection member and the semiconductor chip; and a second connection member disposed on the first connection member and the semiconductor chip. The first connection member and the second connection member respectively include first redistribution layers and second redistribution layers electrically connected to the connection pads and formed of one or more layers, at least one of the first redistribution layers is disposed between a plurality of insulating layers of the first connection member, and at least one of the second redistribution layers includes sensor patterns recognizing a fingerprint.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a Continuation of U.S. patent application Ser. No.15/663,304, filed Jul. 28, 2017, which claims benefit of priority toKorean Patent Application Nos. 10-2016-0106218 filed on Aug. 22, 2016and 10-2016-0137663 filed on Oct. 21, 2016 in the Korean IntellectualProperty Office, the disclosures of which are incorporated herein byreference in their entirety.

TECHNICAL FIELD

The present disclosure relates to a fan-out semiconductor package, andmore particularly, to a fan-out semiconductor package having afingerprint recognition function.

BACKGROUND

Recently, a significant trend in the development of technology relatedto semiconductor chips has been reductions in the size of semiconductorchips. Therefore, in the area of package technology, in accordance witha rapid increase in demand for small-sized semiconductor chips, or thelike, the implementation of a semiconductor package having a compactsize while including a plurality of pins has been demanded.

One type of package technology suggested to satisfy the technical demandas described above is a fan-out package. Such a fan-out package has acompact size and may allow a plurality of pins to be implemented byredistributing connection terminals outwardly of a region in which asemiconductor chip is disposed.

SUMMARY

An aspect of the present disclosure may provide an ultraminiatureultrathin fan-out semiconductor package having a fingerprint recognitionfunction.

According to an aspect of the present disclosure, a fan-outsemiconductor package may be provided, in which a first connectionmember having a through-hole in which a semiconductor chip is disposedand having a plurality of redistribution layers formed therein isintroduced and a second connection member including redistributionlayers including sensor patterns implementing a high sensitivityfingerprint recognition function is introduced to the semiconductor chipand the first connection member.

According to an aspect of the present disclosure, a fan-outsemiconductor package may include: a first connection member having athrough-hole; a semiconductor chip disposed in the through-hole of thefirst connection member and having an active surface with connectionpads disposed thereon and an inactive surface opposing the activesurface; an encapsulant encapsulating at least portions of the firstconnection member and the semiconductor chip; and a second connectionmember disposed on the first connection member and the semiconductorchip. The first connection member and the second connection memberrespectively include first redistribution layers and secondredistribution layers electrically connected to the connection pads andformed of one or more layers, at least one of the first redistributionlayers is disposed between a plurality of insulating layers constitutingthe first connection member, and at least one of the secondredistribution layers includes sensor patterns recognizing afingerprint.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features, and advantages of the presentdisclosure will be more clearly understood from the following detaileddescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a schematic block diagram illustrating an example of anelectronic device system;

FIG. 2 is a schematic perspective view illustrating an example of anelectronic device;

FIGS. 3A and 3B are schematic cross-sectional views illustrating statesof a fan-in semiconductor package before and after being packaged;

FIG. 4 is schematic cross-sectional views illustrating a packagingprocess of a fan-in semiconductor package;

FIG. 5 is a schematic cross-sectional view illustrating a case in whicha fan-in semiconductor package is mounted on an interposer substrate andis finally mounted on a main board of an electronic device;

FIG. 6 is a schematic cross-sectional view illustrating a case in whicha fan-in semiconductor package is embedded in an interposer substrateand is finally mounted on a main board of an electronic device;

FIG. 7 is a schematic cross-sectional view illustrating a fan-outsemiconductor package;

FIG. 8 is a schematic cross-sectional view illustrating a case in whicha fan-out semiconductor package is mounted on a main board of anelectronic device;

FIG. 9 is a schematic cross-sectional view illustrating an example of afan-out semiconductor package;

FIG. 10 is a schematic plan view of the fan-out semiconductor packagetaken along line I-I′ of FIG. 9;

FIG. 11 is a view illustrating an example of M1 and M2 of the fan-outsemiconductor package of FIG. 9;

FIG. 12 is a view illustrating another example of M1 and M2 of thefan-out semiconductor package of FIG. 9;

FIG. 13 is a schematic cross-sectional view illustrating a modifiedexample of the fan-out semiconductor package of FIG. 9;

FIG. 14 is a schematic cross-sectional view illustrating anothermodified example of the fan-out semiconductor package of FIG. 9;

FIG. 15 is a schematic cross-sectional view illustrating another exampleof a fan-out semiconductor package;

FIG. 16 is a schematic plan view of the fan-out semiconductor packagetaken along line II-II′ of FIG. 15;

FIG. 17 is a schematic cross-sectional view illustrating a modifiedexample of the fan-out semiconductor package of FIG. 15; and

FIG. 18 is a schematic cross-sectional view illustrating anothermodified example of the fan-out semiconductor package of FIG. 15.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments in the present disclosure will bedescribed with reference to the accompanying drawings. In theaccompanying drawings, shapes, sizes, and the like, of components may beexaggerated or shortened for clarity.

The term “an exemplary embodiment” used herein does not refer to thesame exemplary embodiment, and is provided to emphasize a particularfeature or characteristic different from that of another exemplaryembodiment. However, exemplary embodiments provided herein areconsidered to be able to be implemented by being combined in whole or inpart one with another. For example, one element described in aparticular exemplary embodiment, even if it is not described in anotherexemplary embodiment, may be understood as a description related toanother exemplary embodiment, unless an opposite or contradictorydescription is provided therein.

The meaning of a “connection” of a component to another component in thedescription includes an indirect connection through a third component aswell as a direct connection between two components. In addition,“electrically connected” means the concept including a physicalconnection and a physical disconnection. It can be understood that whenan element is referred to with “first” and “second”, the element is notlimited thereby. They may be used only for a purpose of distinguishingthe element from the other elements, and may not limit the sequence orimportance of the elements. In some cases, a first element may bereferred to as a second element without departing from the scope of theclaims set forth herein. Similarly, a second element may also bereferred to as a first element.

Herein, an upper portion, a lower portion, an upper side, a lower side,an upper surface, a lower surface, and the like, are decided based onthe attached drawings. For example, a first connection member isdisposed on a level above a redistribution layer. However, the claimsare not limited thereto. In addition, a vertical direction refers to theabovementioned upward and downward directions, and a horizontaldirection refers to a direction perpendicular to the abovementionedupward and downward directions. In this case, a vertical cross sectionrefers to a case taken along a plane in the vertical direction, and anexample thereof may be a cross-sectional view illustrated in thedrawings. In addition, a horizontal cross section refers to a case takenalong a plane in the horizontal direction, and an example thereof may bea plan view illustrated in the drawings.

Terms used herein are used only in order to describe an exemplaryembodiment rather than limiting the present disclosure. In this case,singular forms include plural forms unless interpreted otherwise incontext.

Electronic Device

FIG. 1 is a schematic block diagram illustrating an example of anelectronic device system.

Referring to FIG. 1, an electronic device 1000 may accommodate a motherboard 1010 therein. The mother board 1010 may include chip relatedcomponents 1020, network related components 1030, other components 1040,and the like, physically or electrically connected thereto. Thesecomponents may be connected to others to be described below to formvarious signal lines 1090.

The chip related components 1020 may include a memory chip such as avolatile memory (for example, a dynamic random access memory (DRAM)), anon-volatile memory (for example, a read only memory (ROM)), a flashmemory, or the like; an application processor chip such as a centralprocessor (for example, a central processing unit (CPU)), a graphicsprocessor (for example, a graphics processing unit (GPU)), a digitalsignal processor, a cryptographic processor, a microprocessor, amicrocontroller, or the like; and a logic chip such as ananalog-to-digital (ADC) converter, an application-specific integratedcircuit (ASIC), or the like. However, the chip related components 1020are not limited thereto, but may also include other types of chiprelated components. In addition, the chip related components 1020 may becombined with each other.

The network related components 1030 may include protocols such aswireless fidelity (Wi-Fi) (Institute of Electrical And ElectronicsEngineers (IEEE) 802.11 family, or the like), worldwide interoperabilityfor microwave access (WiMAX) (IEEE 802.16 family, or the like), IEEE802.20, long term evolution (LTE), evolution data only (Ev-DO), highspeed packet access+(HSPA+), high speed downlink packet access+(HSDPA+),high speed uplink packet access+(HSUPA+), enhanced data GSM environment(EDGE), global system for mobile communications (GSM), globalpositioning system (GPS), general packet radio service (GPRS), codedivision multiple access (CDMA), time division multiple access (TDMA),digital enhanced cordless telecommunications (DECT), Bluetooth, 3G, 4G,and 5G protocols, and any other wireless and wired protocols designatedafter the abovementioned protocols. However, the network relatedcomponents 1030 are not limited thereto, and may also include a varietyof other wireless or wired standards or protocols. In addition, thenetwork related components 1030 may be combined with each other,together with the chip related components 1020 described above.

Other components 1040 may include a high frequency inductor, a ferriteinductor, a power inductor, ferrite beads, a low temperature co-firedceramic (LTCC), an electromagnetic interference (EMI) filter, amultilayer ceramic capacitor (MLCC), or the like. However, othercomponents 1040 are not limited thereto, but may also include passivecomponents used for various other purposes, or the like. In addition,other components 1040 may be combined with each other, together with thechip related components 1020 or the network related components 1030described above.

Depending on a type of the electronic device 1000, the electronic device1000 may include other components that may or may not be physically orelectrically connected to the mother board 1010. These other componentsmay include, for example, a camera module 1050, an antenna 1060, adisplay device 1070, a battery 1080, an audio codec (not illustrated), avideo codec (not illustrated), a power amplifier (not illustrated), acompass (not illustrated), an accelerometer (not illustrated), agyroscope (not illustrated), a speaker (not illustrated), a mass storageunit (for example, a hard disk drive) (not illustrated), a compact disk(CD) drive (not illustrated), a digital versatile disk (DVD) drive (notillustrated), or the like. However, these other components are notlimited thereto, but may also include other components used for variouspurposes depending on a type of electronic device 1000, or the like.

The electronic device 1000 may be a smartphone, a personal digitalassistant (PDA), a digital video camera, a digital still camera, anetwork system, a computer, a monitor, a tablet PC, a laptop PC, anetbook PC, a television, a video game machine, a smartwatch, anautomotive component, or the like. However, the electronic device 1000is not limited thereto, and may be any other electronic deviceprocessing data.

FIG. 2 is a schematic perspective view illustrating an example of anelectronic device.

Referring to FIG. 2, a semiconductor package may be used for variouspurposes in the various electronic devices 1000 as described above. Forexample, a main board 1110 may be accommodated in a body 1101 of asmartphone 1100, and various electronic components 1120 may bephysically or electrically connected to the main board 1110. Inaddition, other components that may or may not be physically orelectrically connected to the main board 1110, such as a camera module1130, may be accommodated in the body 1101. Some of the electroniccomponents 1120 may be the chip related components, and thesemiconductor package 100 may be, for example, an application processoramong the chip related components, but is not limited thereto. Theelectronic device is not necessarily limited to the smartphone 1100, butmay be other electronic devices as described above.

Semiconductor Package

Generally, numerous fine electrical circuits are integrated in asemiconductor chip. However, the semiconductor chip may not serve as afinished semiconductor product in itself, and may be damaged due toexternal physical or chemical impacts. Therefore, the semiconductor chipitself may not be used, but may be packaged and used in an electronicdevice, or the like, in a packaged state.

Here, semiconductor packaging is required due to the existence of adifference in a circuit width between the semiconductor chip and a mainboard of the electronic device in terms of electrical connections. Indetail, a size of connection pads of the semiconductor chip and aninterval between the connection pads of the semiconductor chip are veryfine, but a size of component mounting pads of the main board used inthe electronic device and an interval between the component mountingpads of the main board are significantly larger than those of thesemiconductor chip. Therefore, it may be difficult to directly mount thesemiconductor chip on the main board, and packaging technology forbuffering a difference in a circuit width between the semiconductor chipand the main board is required.

A semiconductor package manufactured by the packaging technology may beclassified as a fan-in semiconductor package or a fan-out semiconductorpackage depending on a structure and a purpose thereof.

The fan-in semiconductor package and the fan-out semiconductor packagewill hereinafter be described in more detail with reference to thedrawings.

Fan-in Semiconductor Package

FIGS. 3A and 3B are schematic cross-sectional views illustrating statesof a fan-in semiconductor package before and after being packaged.

FIG. 4 is schematic cross-sectional views illustrating a packagingprocess of a fan-in semiconductor package.

Referring to the drawings, a semiconductor chip 2220 may be, forexample, an integrated circuit (IC) in a bare state, including a body2221 including silicon (Si), germanium (Ge), gallium arsenide (GaAs), orthe like, connection pads 2222 formed on one surface of the body 2221and including a conductive material such as aluminum (Al), or the like,and a passivation layer 2223 such as an oxide film, a nitride film, orthe like, formed on one surface of the body 2221 and covering at leastportions of the connection pads 2222. In this case, since the connectionpads 2222 are significantly small, it is difficult to mount theintegrated circuit (IC) on an intermediate level printed circuit board(PCB) as well as on the main board of the electronic device, or thelike.

Therefore, depending on a size of the semiconductor chip 2220, aconnection member 2240 may be formed on the semiconductor chip 2220, inorder to redistribute the connection pads 2222. The connection member2240 may be formed by forming an insulating layer 2241 on thesemiconductor chip 2220 using an insulating material such as aphotoimagable dielectric (PID) resin, forming via holes 2243 h exposingthe connection pads 2222, and then forming wiring patterns 2242 and vias2243. Then, a passivation layer 2250 protecting the connection member2240 may be formed, an opening 2251 may be formed, and an underbumpmetal layer 2260, or the like, may be formed. That is, a fan-insemiconductor package 2200 including, for example, the semiconductorchip 2220, the connection member 2240, the passivation layer 2250, andthe underbump metal layer 2260 may be manufactured through a series ofprocesses.

As described above, the fan-in semiconductor package may have a packageform in which all of the connection pads, for example, input/output(I/O) terminals, of the semiconductor chip are disposed inside thesemiconductor chip, and may have excellent electrical characteristicsand be produced at a low cost. Therefore, many elements mounted insmartphones have been manufactured in a fan-in semiconductor packageform. In detail, many elements mounted in smartphones have beendeveloped to implement a rapid signal transfer while having a compactsize.

However, since all I/O terminals need to be disposed inside thesemiconductor chip in the fan-in semiconductor package, the fan-insemiconductor package has a large spatial limitation. Therefore, it isdifficult to apply this structure to a semiconductor chip having a largenumber of I/O terminals or a semiconductor chip having a compact size.In addition, due to the disadvantage described above, the fan-insemiconductor package may not be directly mounted and used on the mainboard of the electronic device. Here, even in a case that a size of theI/O terminals of the semiconductor chip and an interval between the I/Oterminals of the semiconductor chip are increased by a redistributionprocess, the size of the I/O terminals of the semiconductor chip and theinterval between the I/O terminals of the semiconductor chip may not besufficient to directly mount the fan-in semiconductor package on themain board of the electronic device.

FIG. 5 is a schematic cross-sectional view illustrating a case in whicha fan-in semiconductor package is mounted on an interposer substrate andis finally mounted on a main board of an electronic device.

FIG. 6 is a schematic cross-sectional view illustrating a case in whicha fan-in semiconductor package is embedded in an interposer substrateand is finally mounted on a main board of an electronic device.

Referring to the drawings, in a fan-in semiconductor package 2200,connection pads 2222, that is, I/O terminals, of a semiconductor chip2220 may be redistributed through an interposer substrate 2301, and thefan-in semiconductor package 2200 may be finally mounted on a main board2500 of an electronic device in a state in which it is mounted on theinterposer substrate 2301. In this case, solder balls 2270, and thelike, may be fixed by an underfill resin 2280, or the like, and an outerside of the semiconductor chip 2220 may be covered with a moldingmaterial 2290, or the like. Alternatively, a fan-in semiconductorpackage 2200 may be embedded in a separate interposer substrate 2302,connection pads 2222, that is, I/O terminals, of the semiconductor chip2220 may be redistributed by the interposer substrate 2302 in a state inwhich the fan-in semiconductor package 2200 is embedded in theinterposer substrate 2302, and the fan-in semiconductor package 2200 maybe finally mounted on a main board 2500 of an electronic device.

As described above, it may be difficult to directly mount and use thefan-in semiconductor package on the main board of the electronic device.Therefore, the fan-in semiconductor package may be mounted on theseparate interposer substrate and be then mounted on the main board ofthe electronic device through a packaging process or may be mounted andused on the main board of the electronic device in a state in which itis embedded in the interposer substrate.

Fan-Out Semiconductor Package

FIG. 7 is a schematic cross-sectional view illustrating a fan-outsemiconductor package.

Referring to the drawing, in a fan-out semiconductor package 2100, forexample, an outer side of a semiconductor chip 2120 may be protected byan encapsulant 2130, and connection pads 2122 of the semiconductor chip2120 may be redistributed outwardly of the semiconductor chip 2120 by aconnection member 2140. In this case, a passivation layer 2150 may befurther formed on the connection member 2140, and an underbump metallayer 2160 may be further formed in openings of the passivation layer2150. Solder balls 2170 may be further formed on the underbump metallayer 2160. The semiconductor chip 2120 may be an integrated circuit(IC) including a body 2121, the connection pads 2122, a passivationlayer (not illustrated), and the like. The connection member 2140 mayinclude an insulating layer 2141, redistribution layers 2142 formed onthe insulating layer 2141, and vias 2143 electrically connecting theconnection pads 2122 and the redistribution layers 2142 to each other.

As described above, the fan-out semiconductor package may have a form inwhich I/O terminals of the semiconductor chip are redistributed anddisposed outwardly of the semiconductor chip through the connectionmember formed on the semiconductor chip. As described above, in thefan-in semiconductor package, all I/O terminals of the semiconductorchip need to be disposed inside the semiconductor chip. Therefore, whena size of the semiconductor chip is decreased, a size and a pitch ofballs need to be decreased, such that a standardized ball layout may notbe used in the fan-in semiconductor package. On the other hand, thefan-out semiconductor package has the form in which the I/O terminals ofthe semiconductor chip are redistributed and disposed outwardly of thesemiconductor chip through the connection member formed on thesemiconductor chip as described above. Therefore, even in a case that asize of the semiconductor chip is decreased, a standardized ball layoutmay be used in the fan-out semiconductor package as it is, such that thefan-out semiconductor package may be mounted on the main board of theelectronic device without using a separate interposer substrate, asdescribed below.

FIG. 8 is a schematic cross-sectional view illustrating a case in whicha fan-out semiconductor package is mounted on a main board of anelectronic device.

Referring to the drawing, a fan-out semiconductor package 2100 may bemounted on a main board 2500 of an electronic device through solderballs 2170, or the like. That is, as described above, the fan-outsemiconductor package 2100 includes the connection member 2140 formed onthe semiconductor chip 2120 and capable of redistributing the connectionpads 2122 to a fan-out region that is outside of an area of thesemiconductor chip 2120, such that the standardized ball layout may beused in the fan-out semiconductor package 2100 as it is. As a result,the fan-out semiconductor package 2100 may be mounted on the main board2500 of the electronic device without using a separate interposersubstrate, or the like.

As described above, since the fan-out semiconductor package may bemounted on the main board of the electronic device without using theseparate interposer substrate, the fan-out semiconductor package may beimplemented at a thickness lower than that of the fan-in semiconductorpackage using the interposer substrate. Therefore, the fan-outsemiconductor package may be miniaturized and thinned. In addition, thefan-out semiconductor package has excellent thermal characteristics andelectrical characteristics, such that it is particularly appropriate fora mobile product. Therefore, the fan-out semiconductor package may beimplemented in a form more compact than that of a generalpackage-on-package (POP) form using a printed circuit board (PCB), andmay solve a problem due to occurrence of a warpage phenomenon.

Meanwhile, the fan-out semiconductor package refers to packagetechnology for mounting the semiconductor chip on the main board of theelectronic device, or the like, as described above, and protecting thesemiconductor chip from external impacts, and is a concept differentfrom that of a printed circuit board (PCB) such as an interposersubstrate, or the like, having a scale, a purpose, and the like,different from those of the fan-out semiconductor package, and havingthe fan-in semiconductor package embedded therein.

An ultraminiature ultrathin fan-out semiconductor package having afingerprint recognition function will be hereinafter described withreference to the drawings.

FIG. 9 is a schematic cross-sectional view illustrating an example of afan-out semiconductor package.

FIG. 10 is a schematic plan view of the fan-out semiconductor packagetaken along line I-I′ of FIG. 9.

FIG. 11 is a view illustrating an example of M1 and M2 of the fan-outsemiconductor package of FIG. 9.

FIG. 12 is a view illustrating another example of M1 and M2 of thefan-out semiconductor package of FIG. 9.

Referring to the drawings, a fan-out semiconductor package 100Aaccording to an exemplary embodiment in the present disclosure mayinclude a first connection member 110 having a through-hole 110H, asemiconductor chip 120 disposed in the through-hole 110H of the firstconnection member 110 and having an active surface with connection pads122 disposed thereon and an inactive surface opposing the activesurface, an encapsulant 130 encapsulating at least portions of the firstconnection member 110 and the semiconductor chip 120, and a secondconnection member 140 disposed on the first connection member 110 andthe active surface of the semiconductor chip 120. The first connectionmember 110 may be connected to the semiconductor chip 120 through thesecond connection member 140. The first connection member 110 mayinclude a plurality of redistribution layers 112 a, 112 b, and 112 celectrically connected to the connection pads 122. The second connectionmember 140 may include a plurality of redistribution layers 142electrically connected to the connection pads 122. One 112 b of theplurality of redistribution layers 112 a, 112 b, and 112 c of the firstconnection member 110 may be disposed between a plurality of insulatinglayers 111 a and 111 b constituting the first connection member 110.Redistribution layers M1 and M2 disposed at an outer side of the secondconnection member 140 among the plurality of redistribution layers 142of the second connection member 140 may include sensor patterns Rx andTx capable of recognizing a fingerprint by precisely detecting a changein a capacitance.

A structure of a fingerprint recognition sensor according to the relatedart was generally a four-layer cored-type general ball grid array (BGA)substrate structure based on a copper clad laminate (CCL). For example,a semiconductor chip was surface-mounted on a lower surface of a ballgrid array substrate having a pattern having a fingerprint recognitionsensor function formed thereon, using connection parts. Solder balls, orthe like, were formed on the same level, to mount the ball grid arraysubstrate having the semiconductor chip surface-mounted on the lowersurface thereof on a main board of an electronic device. In such asubstrate structure, it was difficult to form fine wirings on Tx and Rxlayers and make the Tx and Rx layers ultrathin, which are important inimproving transmitting and receiving sensitivity of a sensor, and it wastechnically difficult to secure perfect flatness of the outermostcontact layer. In addition, it was necessary to use a ferroelectricinsulating material in order to improve efficiency of touch sensingincluding the Tx and Rx layers, but it was difficult to use a materialother than existing substrate materials. In addition, since thesemiconductor chip and a passive component are mounted on a lower endportion of the substrate, a thickness of the semiconductor chip and athickness of the passive component were limited, and a height of thesolder balls needed to be high. Further, recently, customer's needs toeasily change an entire thickness of the fingerprint recognition sensorfrom an ultrathin type to a thick plate type without changing a wiringlayer in order for the fingerprint recognition sensor to be appropriatefor various applications have increased. Therefore, the development ofanew structure allowing the fingerprint recognition sensor to beappropriate for the various applications has been urgently demanded.

In the fan-out semiconductor package 100A according to the exemplaryembodiment, the redistribution layers 142 of the second connectionmember 140 including the sensor patterns Tx and Rx may be manufacturedby a semiconductor method to enable ultra-fine patterning and thinningof insulating layers, resulting in improving transmitting and receivingsensitivity of a sensor. In addition, in a case in which a thickness ofthe semiconductor chip 120 may be easily changed depending on desiredspecifications, an overall thickness of the fan-out semiconductorpackage 100A may be easily adjusted by adjusting a thickness of thefirst connection member 110. In addition, the semiconductor chip 120 maybe disposed in the through-hole 110H of the first connection member 110,such that a height of connection terminals 170 for connecting thefan-out semiconductor package to a main board of an electronic devicemay be reduced. In addition, the redistribution layers 112 a, 112 b, and112 c may be formed in the first connection member 110 to further reducea thickness and improve performance of the fan-out semiconductor package100A. Particularly, the redistribution layer 112 b may be formed betweenthe insulating layers 111 a and 111 b constituting the first connectionmember 110 to significantly increase such an effect.

Meanwhile, the sensor patterns Tx and Rx may include Tx (TransferTransistor) patterns and Rx (Reset Transistor) patterns formed ondifferent layers M1 and M2. In this case, the Tx patterns and the Rxpatterns may be disposed in a mesh form in relation to a transparentsurface. In addition, when fine circuit technology is applied in formingthe patterns, the Rx patterns may be formed so that a line width Wrthereof is narrow and an interval Sr therebetween is wide and the Txpatterns may be formed so that a line width Wt is wide and an intervalSt therebetween is narrow. Here, the line width Wt of the Tx patterns isgreater than the line width Wr of the Rx patterns, and the interval Stbetween the Tx patterns is smaller than the interval Sr between the Rxpatterns. Therefore, the Tx patterns may easily transfer a signalrecognized through a wide region to the Rx patterns, and the transferredsignal may be transferred to other layers M3 and M4 through vias.

Alternatively, the sensor patterns Tx and Rx may include Tx patterns andRx patterns formed on the same layer M1. In this case, one layer M2 maybe omitted unlike in the case of the drawings. That is, the sensorpatterns Tx and Rx may be formed on the same layer M1 using fine spacingtechnology. In this case, the Tx patterns and the Rx patterns may bealternately disposed in a diamond form while having a predeterminedinterval g therebetween to significantly increase sensing sensitivity.Individual pads of the Tx patterns may again be connected to each otheron a layer M3 below the layer M1 through vias to improve sensingsensitivity. Pads of the Rx patterns may be connected to each other onthe outermost layer M1 through a fine circuit. The Tx patterns and theRx patterns may be alternately disposed in the diamond form while havinga predetermined interval g therebetween. Certain forms of the Txpatterns and the Rx patterns are not particularly limited. For example,corners of the respective patterns may be rounded, unlike as depicted inthe drawings.

Meanwhile, a passivation layer 150 may be further disposed on the secondconnection member 140. In this case, the passivation layer 150 may havea dielectric constant greater than that of an insulating layer 141constituting the second connection member 140. That is, an insulatingmaterial having a high dielectric constant such as a ferroelectricinsulating material may be used in the passivation layer 150 on whichthe sensor patterns Tx and Rx are disposed. In this case, the sensingsensitivity may be more effectively increased.

Meanwhile, at least one layer M3 of the redistribution layers 142 of thesecond connection member 140 may include an electromagnetic waveblocking pattern. The electromagnetic wave blocking pattern may have,for example, a plate shape. The electromagnetic wave blocking patternmay block electromagnetic waves generated by the semiconductor chip 120,or the like, a layer M4 having a routing pattern among theredistribution layers 142, or the like. The electromagnetic waveblocking pattern may also block electromagnetic waves generated by othercomponents depending on a disposition form.

The respective components included in the fan-out semiconductor package100A according to the exemplary embodiment will hereinafter be describedin more detail.

The first connection member 110 may maintain rigidity of the fan-outsemiconductor package 100A depending on certain materials, and serve tosecure uniformity of a thickness of the encapsulant 130. Thesemiconductor chip 120 and the second connection member 120 may beelectrically connected to the main board of the electronic devicethrough the connection terminals 170, or the like, by the firstconnection member 110. The first connection member 110 may include theplurality of redistribution layers 112 a, 112 b, and 112 c toeffectively redistribute the connection pads 122 of the semiconductorchip 120, and may provide a wide wiring design region to significantlysuppress a redistribution layer from being formed in other regions. Thesemiconductor chip 120 may be disposed in the through-hole 110H to bespaced apart from the first connection member 110 by a predetermineddistance. Side surfaces of the semiconductor chip 120 may be surroundedby the first connection member 110. A separate passive component 190such as a capacitor or an inductor may be further disposed in thethrough-hole 110H, and may be electrically connected to thesemiconductor chip 120. However, this is only an example.

The first connection member 110 may include a first insulating layer 111a, a first redistribution layer 112 a in contact with the secondconnection member 140 and embedded in the first insulating layer 111 a,a second redistribution layer 112 b disposed on the other surface of thefirst insulating layer 111 a opposing one surface of the firstinsulating layer 111 a in which the first redistribution layer 112 a isembedded, a second insulating layer 111 b disposed on the firstinsulating layer 111 a and covering the second redistribution layer 112b, and a third redistribution layer 112 c disposed on the secondinsulating layer 111 b. The first to third redistribution layers 112 a,112 b, and 112 c may be electrically connected to the connection pads122. The first and second redistribution layers 112 a and 112 b and thesecond and third redistribution layers 112 b and 112 c may beelectrically connected to each other by first and second vias 113 a and113 b penetrating through the first and second insulating layers 111 aand 111 b, respectively.

Since the first redistribution layer 112 a is embedded in the firstinsulating layer 111 a, an insulating distance of the insulating layer141 of the second connection member 140 may be substantially constant.Since the first connection member 110 may include a large number ofredistribution layers 112 a, 112 b, and 112 c, the second connectionmember 140 may be further simplified. Therefore, a decrease in a yielddepending on a defect occurring in a process of forming the secondconnection member 140 may be suppressed, and the second connectionmember 140 may be thinned. The first redistribution layer 112 a may berecessed into the first insulating layer 111 a, such that a lowersurface of the first insulating layer 111 a and a lower surface of thefirst redistribution layer 112 a have a step therebetween. Resultantly,when an encapsulant 130 is formed, a phenomenon in which a material ofthe encapsulant 130 bleeds to pollute the first redistribution layer 112a may be prevented.

The lower surface of the first redistribution layer 112 a of the firstconnection member 110 may be disposed on a level above a lower surfaceof the connection pad 122 of the semiconductor chip 120. In addition, adistance between the redistribution layer 142 of the second connectionmember 140 and the first redistribution layer 112 a of the firstconnection member 110 may be greater than that between theredistribution layer 142 of the second connection member 140 and theconnection pad 122 of the semiconductor chip 120. Here, the firstredistribution layer 112 a may be recessed into the first insulatinglayer 111 a. The second redistribution layer 112 b of the firstconnection member 110 may be disposed on a level between the activesurface and the inactive surface of the semiconductor chip 120. Thefirst connection member 110 may be formed to have a thicknesscorresponding to that of the semiconductor chip 120. Therefore, thesecond redistribution layer 112 b formed in the first connection member110 may be disposed on a level between the active surface and theinactive surface of the semiconductor chip 120.

Thicknesses of the redistribution layers 112 a, 112 b, and 112 c of thefirst connection member 110 may be greater than that of theredistribution layer 142 of the second connection member 140. Since thefirst connection member 110 may have a thickness equal to or greaterthan that of the semiconductor chip 120, the redistribution layers 112a, 112 b, and 112 c may be formed at large sizes depending on a scale ofthe first connection member 110. On the other hand, the redistributionlayers 142 of the second connection member 140 formed through a finecircuit process such as a semiconductor process may be formed at arelatively small size for thinness.

For example, a material including an inorganic filler and an insulatingresin may be used as materials of the insulating layers 111 a and 111 b.For example, a thermosetting resin such as an epoxy resin, athermoplastic resin such as a polyimide resin, or a resin including areinforcing material such as an inorganic filler, for example, silica,alumina, or the like, more specifically, Ajinomoto Build up Film (ABF),FR-4, Bismaleimide Triazine (BT), a photoimagable dielectric (PID)resin, BT, or the like, may be used. Alternatively, a material in whicha thermosetting resin or a thermoplastic resin is impregnated togetherwith an inorganic filler in a core material such as a glass fiber (or aglass cloth or a glass fabric), for example, prepreg, or the like, mayalso be used as the insulating material.

The redistribution layers 112 a, 112 b, and 112 c may be a conductivematerial such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold(Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof. Theredistribution layers 112 a, 112 b, and 112 c may perform variousfunctions depending on designs of corresponding layers. For example, theredistribution layers 112 a, 112 b, and 112 c may include ground (GND)patterns, power (PWR) patterns, signal (S) patterns, and the like. Here,the signal (S) patterns may include various signals except for theground (GND) patterns, the power (PWR) patterns, and the like, such asdata signals, and the like. In addition, the redistribution layers 112a, 112 b, and 112 c may include pad patterns for vias, pad patterns forconnection terminals, and the like.

A material of each of the vias 113 a and 113 b may be a conductivematerial. Each of the vias 113 a and 113 b may be completely filled withthe conductive material, or the conductive material may also be formedalong a wall of each of via holes. When holes for the vias 113 a and 113b are formed, some of the pad patterns of the first redistribution layer112 a and the second redistribution layer 112 b may serve as a stopper,and it may be thus advantageous in a process that each of the vias 113 aand 113 b has a tapered shape of which a width of an upper surface isgreater than that of a lower surface. In this case, the vias 113 a and113 b may be integrated with portions of the second redistribution layer112 b and the third redistribution layer 112 c, respectively.

The semiconductor chip 120 may be an integrated circuit (IC) provided inan amount of several hundreds to several millions of elements or moreintegrated in a single chip. The integrated circuit may be, for example,an application specific integrated circuit (ASIC) capable of performingfingerprint recognition sensor processing. The semiconductor chip 120may be formed on the basis of an active wafer. In this case, a basematerial of a body 121 may be silicon (Si), germanium (Ge), galliumarsenide (GaAs), or the like. Various circuits may be formed on the body121. The connection pads 122 may electrically connect the semiconductorchip 120 to other components. A material of each of the connection pads122 may be a conductive material such as aluminum (Al), or the like. Apassivation layer 123 exposing the connection pads 122 may be formed onthe body 121, and may be an oxide film, a nitride film, or the like, ora double layer of an oxide layer and a nitride layer. A lower surface ofthe connection pad 122 may have a step with respect to a lower surfaceof the encapsulant 130 through the passivation layer 123. Resultantly, aphenomenon in which the encapsulant 130 bleeds into the lower surface ofthe connection pads 122 may be prevented to some extent. An insulatinglayer (not illustrated), and the like, may also be further disposed inother required positions.

The encapsulant 130 may protect the semiconductor chip 120. Anencapsulation form of the encapsulant 130 is not particularly limited,and may be a form in which the encapsulant 130 surrounds at leastportions of the semiconductor chip 120. For example, the encapsulant 130may cover at least portions of the first connection member 110 and theinactive surface of the semiconductor chip 120, and fill spaces betweenwalls of the through-hole 110H and the side surfaces of thesemiconductor chip 120. In addition, the encapsulant 130 may also fillat least a portion of a space between the passivation layer 123 of thesemiconductor chip 120 and the second connection member 140. Certainmaterials of the encapsulant 130 are not particularly limited. Forexample, an insulating material may be used as the certain materials ofthe encapsulant 130. In this case, the insulating material may be athermosetting resin such as an epoxy resin, a thermoplastic resin suchas a polyimide resin, a resin having a reinforcing material such as aninorganic filler impregnated in the thermosetting resin and thethermoplastic resin, for example, ABF, FR-4, BT, a PID resin, or thelike. In addition, a known molding material such as an epoxy moldingcompound (EMC), or the like, may also be used. Alternatively, a resin inwhich a thermosetting resin or a thermoplastic resin is impregnatedtogether with an inorganic filler in a core material such as a glassfiber (or a glass cloth or a glass fabric) may also be used as theinsulating material.

The second connection member 140 may redistribute the connection pads122 of the semiconductor chip 120 and may include the redistributionlayers 142 capable of implementing a high sensitivity fingerprintrecognition function. Several tens to several hundreds of connectionpads 122 having various functions may be redistributed by the secondconnection member 140, and may be physically or electrically connectedto an external source through the connection terminals 170 depending onthe functions. In addition, a fingerprint recognition function that isto implement the high sensitivity fingerprint recognition function maybe implemented. The second connection member 140 may include insulatinglayers 141, the redistribution layers 142 disposed on the insulatinglayers 141, and vias 143 penetrating through the insulating layers 141and connected to the redistribution layers 142.

For example, an insulating material may be used as a material of theinsulating layer 141. In this case, the insulating material may be athermosetting resin such as an epoxy resin, a thermoplastic resin suchas a polyimide resin, a resin having a reinforcing material such as aninorganic filler impregnated in the thermosetting resin and thethermoplastic resin, for example, ABF, FR-4, BT, a PID resin, or thelike. It may be advantageous in forming fine patterns that aphotosensitive insulating material such as a PID resin is used as thematerial of the insulating layer. When the insulating layers 141 aremultiple layers, materials of the insulating layers 141 may be the sameas each other, and may also be different from each other, if necessary.When the insulating layers 141 are the multiple layers, the insulatinglayers 141 may be integrated with each other depending on a process,such that a boundary therebetween may also not be apparent.

The redistribution layers 142 may include the layers M1 and M2 capableof performing a fingerprint recognition function, the layer M3 capableof performing a shield function, and the layer M4 capable of performinga redistribution function. A material of each of the redistributionlayers 142 may be a conductive material such as copper (Cu), aluminum(Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium(Ti), or alloys thereof. The redistribution layers 142 may performvarious functions depending on designs of corresponding layers. Forexample, the layer M1 may include the Rx patterns and the Tx patterns,or the layers M1 and M2 may include the Rx patterns and the Tx patterns.The layer M3 may include the electromagnetic wave blocking patterns. Thelayer M4 may include ground (GND) patterns, power (PWR) patterns, signal(S) patterns, and the like. Here, the signal (S) patterns may includevarious signals except for the ground (GND) patterns, the power (PWR)patterns, and the like, such as data signals, and the like. In addition,these layers M1 to M4 may include various kinds of pad patterns.

The vias 143 may electrically connect the connection pads 122, theredistribution layers 142, or the like, formed on different layers toeach other, resulting in an electrical path in the fan-out semiconductorpackage 100A. A material of each of the vias 143 may be a conductivematerial such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold(Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys thereof. Each ofthe vias 143 may be completely filled with the conductive material, orthe conductive material may also be formed along a wall of each of thevias. In addition, each of the vias 143 may have all of the shapes knownin the related art, such as a tapered shape, a cylindrical shape, andthe like.

The passivation layer 150 may protect the second connection member 140from external physical or chemical damage. The passivation layer 150 maybe the outermost layer touched by a fingerprint. A material of thepassivation layer 150 is not particularly limited, but may be the knowninsulating material. However, a ferroelectric insulating layer may beused as the material of the passivation layer 150 in order to improveefficiency of touch sensing. For example, the dielectric constant of thepassivation layer 150 may be greater than that of the insulating layer141 of the second connection member 140.

An underbump metal layer 160 may be additionally configured to improveconnection reliability of the connection terminals 170 and improve boardlevel reliability of the fan-out semiconductor package 100A. Theunderbump metal layer 160 may be connected to the third redistributionlayer 112 c of the first connection member 110 opened through openings131 of the encapsulant 130. The underbump metal layer 160 may be formedin the openings 131 of the encapsulant 130 by the known metallizationmethod using the known conductive metal such as a metal, but is notlimited thereto.

The connection terminals 170 may be additionally configured tophysically or electrically externally connect the fan-out semiconductorpackage 100A. For example, the fan-out semiconductor package 100A may bemounted on the main board of the electronic device through theconnection terminals 170. Each of the connection terminals 170 may beformed of a conductive material, for example, a solder, or the like.However, this is only an example, and a material of each of theconnection terminals 170 is not particularly limited thereto. Each ofthe connection terminals 170 may be a land, a ball, a pin, or the like.The connection terminals 170 may be formed as a multilayer or monolayerstructure. When the connection terminals 170 are formed as a multilayerstructure, the connection terminals 170 may include a copper (Cu) pillarand a solder. When the connection terminals 170 are formed as amonolayer structure, the connection terminals 170 may include atin-silver solder or copper (Cu). However, this is only an example, andthe connection terminals 170 are not limited thereto.

The number, an interval, a disposition, or the like, of the connectionterminals 170 is not particularly limited, and may be sufficientlymodified by a person skilled in the art depending on design particulars.For example, the connection terminals 170 may be provided in an amountof several tens to several thousands according to the number ofconnection pads 122 of the semiconductor chip 120, but are not limitedthereto, and may also be provided in an amount of several tens toseveral thousands or more or several tens to several thousands or less.When the connection terminals 170 are solder balls, the connectionterminals 170 may cover side surfaces of the underbump metal layer 160extending onto a lower surface of the encapsulant 130, and connectionreliability may be more excellent.

At least one of the connection terminals 170 may be disposed in afan-out region. The fan-out region is a region except for the region inwhich the semiconductor chip 120 is disposed. That is, the fan-outsemiconductor package 100A according to the exemplary embodiment may bea fan-out package. The fan-out package may have excellent reliability ascompared to a fan-in package, may implement a plurality of input/output(I/O) terminals, and may facilitate a 3D interconnection. In addition,as compared to a ball grid array (BGA) package, a land grid array (LGA)package, or the like, the fan-out package may be mounted on anelectronic device without a separate board. Thus, the fan-out packagemay be manufactured to have a small thickness, and may have pricecompetitiveness.

Meanwhile, although not illustrated in the drawings, a metal layer maybe further disposed on a wall of the through-hole 110H, if necessary.The metal layer may serve to effectively dissipate heat generated by thesemiconductor chip 120. In addition, the metal layer may also serve toblock electromagnetic waves. In addition, the number of through-holes110H may be plural and semiconductor chips 120 or passive components maybe disposed in the through-holes 110H, respectively. In addition to thestructures described above, the structures known in the related art maybe applied.

FIG. 13 is a schematic cross-sectional view illustrating a modifiedexample of the fan-out semiconductor package of FIG. 9.

Referring to the drawing, in a fan-out semiconductor package 100Baccording to the modified example, redistribution layers 142 of a secondconnection member 140 may include layers M1 and M2 capable of performinga fingerprint recognition function and a layer M3 capable of performinga redistribution function. A layer capable of performing a shieldfunction may be omitted. In this case, an insulating layer, mostadjacent to the semiconductor chip 120, of the insulating layers 141 ofthe second connection member 140 may have a thickness greater than thoseof the other insulating layers. A shield function may be performedthrough such a difference in thickness, such that the second connectionmember may be further thinned. Meanwhile, the layers M1 and M2 may alsobe desired as one layer depending on designs of sensor patterns Tx andRx. Descriptions of configurations overlapping that provided above areomitted hereinafter.

FIG. 14 is a schematic cross-sectional view illustrating anothermodified example of the fan-out semiconductor package of FIG. 9.

Referring to the drawing, in a fan-out semiconductor package 100Caccording to another modified example, a semiconductor chip 120 may bedisposed in a face-down form in the drawing. In this case, a secondconnection member 140 b including redistribution layers 142 b includingseveral layers M1 to M3 performing the various functions described abovemay be disposed on an inactive surface of the semiconductor chip 120,and a third connection member 140 a including a redistribution layer 142a of which the main purpose is to redistribute connection pads 122 ofthe semiconductor chip 120 may be disposed on an active surface of thesemiconductor chip 120. The second connection member 140 b and the thirdconnection member 140 a may be connected to each other by a firstconnection member 110. An insulating layer 141 b of the secondconnection member 140 b may be formed of an insulating material such asPID, and the redistribution layer 142 b and vias 143 b of the secondconnection member 140 b may be formed of the known conductive materialsuch as copper (Cu), or the like. An insulating layer 141 a of the thirdconnection member 140 a may be formed of an insulating material such asPID, and the redistribution layer 142 a and vias 143 a of the thirdconnection member 140 a may be formed of the known conductive materialsuch as copper (Cu), or the like. The layers M1 to M3 of the secondconnection member 140 b may be modified as described above depending ondesigns. Descriptions of configurations overlapping that provided aboveare omitted hereinafter.

FIG. 15 is a schematic cross-sectional view illustrating another exampleof a fan-out semiconductor package.

FIG. 16 is a schematic plan view of the fan-out semiconductor packagetaken along line II-II′ of FIG. 15.

Referring to the drawings, in a fan-out semiconductor package 100Daccording to another exemplary embodiment in the present disclosure, afirst connection member 110 may include a first insulating layer 111 a,a first redistribution layer 112 a and a second redistribution layer 112b disposed on opposite surfaces of the first insulating layer 111 a,respectively, a second insulating layer 111 b disposed on the firstinsulating layer 111 a and covering the first redistribution layer 112a, a third redistribution layer 112 c disposed on the second insulatinglayer 111 b, a third insulating layer 111 c disposed on the firstinsulating layer 111 a and covering the second redistribution layer 112b, and a fourth redistribution layer 112 d disposed on the thirdinsulating layer 111 c. The first to fourth redistribution layers 112 a,112 b, 112 c, and 112 d may be electrically connected to connection pads122. Since the first connection member 110 may include a larger numberof redistribution layers 112 a, 112 b, 112 c, and 112 d, a secondconnection member 140 may be further simplified. The first to fourthredistribution layers 112 a, 112 b, 112 c, and 112 d may be electricallyconnected to each other by first to third vias 113 a, 113 b, and 113 cpenetrating through the first to third insulating layers 111 a, 111 b,and 111 c, respectively.

The first insulating layer 111 a may have a thickness greater than thoseof the second insulating layer 111 b and the third insulating layer 111c. The first insulating layer 111 a may be basically relatively thick inorder to maintain rigidity, and the second insulating layer 111 b andthe third insulating layer 111 c may be introduced in order to form alarger number of redistribution layers 112 c and 112 d. The firstinsulating layer 111 a may include an insulating material different fromthose of the second insulating layer 111 b and the third insulatinglayer 111 c. For example, the first insulating layer 111 a may be, forexample, prepreg including a core material, an inorganic filler, and aninsulating resin, and the second insulating layer 111 b and the thirdinsulating layer 111 c may be an ABF or a photosensitive insulating filmincluding an inorganic filler and an insulating resin. However, thematerials of the first insulating layer 111 a and the second and thirdinsulating layers 111 b and 111 c are not limited thereto. Similarly,the first via 113 a may have a diameter greater than those of the secondvia 113 b and the third via 113 c.

A lower surface of the third redistribution layer 112 c of the firstconnection member 110 may be disposed on a level below a lower surfaceof the connection pad 122 of a semiconductor chip 120. In addition, adistance between a redistribution layer 142 of the second connectionmember 140 and the third redistribution layer 112 c of the firstconnection member 110 may be smaller than that between theredistribution layer 142 of the second connection member 140 and theconnection pad 122 of the semiconductor chip 120. Here, the thirdredistribution layer 112 c may be disposed in a protruding form on thesecond insulating layer 111 b, resulting in contact with the secondconnection member 140. The first redistribution layer 112 a and thesecond redistribution layer 112 b of the first connection member 110 maybe disposed on a level between an active surface and an inactive surfaceof the semiconductor chip 120. The first connection member 110 may beformed at a thickness corresponding to that of the semiconductor chip120. Therefore, the first redistribution layer 112 a and the secondredistribution layer 112 b formed in the first connection member 110 maybe disposed on a level between the active surface and the inactivesurface of the semiconductor chip 120.

Thicknesses of the redistribution layers 112 a, 112 b, 112 c, and 112 dof the first connection member 110 may be greater than that of theredistribution layer 142 of the second connection member 140. Since thefirst connection member 110 may have a thickness equal to or greaterthan that of the semiconductor chip 120, the redistribution layers 112a, 112 b, 112 c, and 112 d may also be formed to have large sizes. Onthe other hand, the redistribution layer 142 of the second connectionmember 140 may be formed at a relatively small size for thinness.Descriptions of configurations overlapping that provided above areomitted hereinafter.

FIG. 17 is a schematic cross-sectional view illustrating a modifiedexample of the fan-out semiconductor package of FIG. 15.

Referring to the drawing, in a fan-out semiconductor package 100Daccording to the modified example, redistribution layers 142 of a secondconnection member 140 may include layers M1 and M2 capable of performinga fingerprint recognition function and a layer M3 capable of performinga redistribution function. A layer capable of performing a shieldfunction may be omitted. In this case, an insulating layer, mostadjacent to the semiconductor chip 120, of the insulating layers 141 ofthe second connection member 140 may have a thickness greater than thoseof the other insulating layers. A shield function may be performedthrough such a thickness difference, such that the second connectionmember may be further thinned. Meanwhile, the layers M1 and M2 may alsobe desired as one layer depending on designs of sensor patterns Tx andRx. Descriptions of configurations overlapping that provided above areomitted hereinafter.

FIG. 18 is a schematic cross-sectional view illustrating anothermodified example of the fan-out semiconductor package of FIG. 15.

Referring to the drawing, in a fan-out semiconductor package 100Faccording to another modified example, a semiconductor chip 120 may bedisposed in a face-down form in the drawing. In this case, a secondconnection member 140 b including redistribution layers 142 b includingseveral layers M1 to M3 performing the various functions described abovemay be disposed on an inactive surface of the semiconductor chip 120,and a third connection member 140 a including a redistribution layer 142a of which the main purpose is to redistribute connection pads 122 ofthe semiconductor chip 120 may be disposed on an active surface of thesemiconductor chip 120. The second connection member 140 b and the thirdconnection member 140 a may be connected to each other by a firstconnection member 110. An insulating layer 141 b of the secondconnection member 140 b may be formed of an insulating material such asPID, and the redistribution layer 142 b and vias 143 b of the secondconnection member 140 b may be formed of the known conductive materialsuch as copper (Cu), or the like. An insulating layer 141 a of the thirdconnection member 140 a may be formed of an insulating material such asPID, and the redistribution layer 142 a and vias 143 a of the thirdconnection member 140 a may be formed of the known conductive materialsuch as copper. The layers M1 to M3 of the second connection member 140b may be modified as described above depending on designs. Descriptionsof configurations overlapping that provided above are omittedhereinafter.

As set forth above, according to the exemplary embodiments in thepresent disclosure, an ultraminiature ultrathin fan-out semiconductorpackage having a fingerprint recognition function may be provided.

While exemplary embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of the presentinvention as defined by the appended claims.

What is claimed is:
 1. A fan-out semiconductor package comprising: firstinsulating layers having a through-hole penetrating through outermostsurfaces of the first insulating layers opposing each other; firstredistribution layers disposed on or in the first insulating layer,respectively; first vias disposed in the first insulating layers,respectively, and electrically connecting the first redistributionlayers to each other; a semiconductor chip disposed in the through-holeof the first insulating layers, and having an active surface withconnection pads disposed thereon and an inactive surface opposing theactive surface; an encapsulant covering one of the inactive surface andthe active surface of the semiconductor chip, covering one of theoutermost surfaces of the first insulating layers, and extendingcontinuously from the covered surface of the semiconductor and thecovered outermost surface of the first insulating layers to fill atleast a portion of the through-hole; second insulating layers and secondredistribution layers alternatively disposed on the semiconductor chip,the first insulating layers, and the first redistribution layers; andsecond vias disposed in the second insulating layers, respectively, andelectrically connecting the second redistribution layers to each other,wherein the second redistribution layers are electrically connected tothe connection pads, at least one of the second redistribution layersincludes sensor patterns recognizing a fingerprint and protrudes fromone of the second insulating layers, and the one of the secondinsulating layers, from which the at least one of the secondredistribution layers including the sensor patterns protrudes, isdisposed between the semiconductor chip and the at least one of thesecond redistribution layers including the sensor patterns.
 2. Thefan-out semiconductor package of claim 1, wherein the sensor patternsinclude Tx patterns and Rx patterns formed on different layers, and theTx patterns and the Rx patterns are disposed in a mesh form.
 3. Thefan-out semiconductor package of claim 2, wherein a line width of the Txpatterns is greater than that of the Rx patterns, and an intervalbetween the Tx patterns is smaller than that between the Rx patterns. 4.The fan-out semiconductor package of claim 1, wherein the sensorpatterns include Tx patterns and Rx patterns formed on the same layer,and the Tx patterns and the Rx patterns are alternatively disposed in adiamond form.
 5. The fan-out semiconductor package of claim 1, furthercomprising a passivation layer disposed on the second connectioninsulating layers, wherein the passivation layer has a dielectricconstant greater than those of the second insulating layers.
 6. Thefan-out semiconductor package of claim 1, wherein at least one of thesecond redistribution layers includes an electromagnetic wave blockingpattern.
 7. The fan-out semiconductor package of claim 1, wherein aninsulating layer, most adjacent to the semiconductor chip, of the secondinsulating layers, has a thickness greater than those of the other ofthe second insulating layers.
 8. The fan-out semiconductor package ofclaim 1, wherein the second insulating layers and the secondredistribution layers are alternately disposed on the active surface ofthe semiconductor chip, and the first redistribution layers areelectrically connected to the semiconductor chip at least by the secondredistribution layers.
 9. The fan-out semiconductor package of claim 1,further comprising third redistribution layers and third insulatinglayers alternately disposed on the active surface the semiconductorchip, the first insulating layers, the first redistribution layers,wherein the third redistribution layers are electrically connected tothe connection pads, the second redistribution layers and the secondinsulating layers are alternately disposed on the inactive surface ofthe semiconductor chip, and the second redistribution layers and thethird redistribution layers are connected to each other at least by thefirst redistribution layers.
 10. The fan-out semiconductor package ofclaim 1, further comprising a passive component disposed in thethrough-hole, wherein the passive component is electrically connected tothe connection pads.
 11. The fan-out semiconductor package of claim 1,wherein one of the first redistribution layers is embedded in anoutermost one among the first insulating layers.
 12. The fan-outsemiconductor package of claim 11, wherein a lower surface of the one ofthe first redistribution layers has a step with respect to a lowersurface of the outermost one among the first insulating layers.
 13. Thefan-out semiconductor package of claim 1, wherein outermost ones of thefirst redistribution layers protrude on outermost ones of the firstinsulating layers, respectively.
 14. The fan-out semiconductor packageof claim 13, wherein the number of the first insulating layers is threeand the number of the first redistribution is four.
 15. The fan-outsemiconductor package of claim 14, wherein a center one of the firstinsulating layers has a thickness greater than that those of the otherfirst insulating layers.
 16. The fan-out semiconductor package of claim1, where the encapsulant extends continuously from the through-hole to aregion between the semiconductor chip and an insulating layer, mostadjacent to the semiconductor chip, among the second insulating layers.17. A fan-out semiconductor package comprising: first insulating layershaving a through-hole penetrating through outermost surfaces of thefirst insulating layers opposing each other; first redistribution layersalternately disposed separated by the first insulating layers; firstvias disposed in the first insulating layers, respectively, andelectrically connecting the first redistribution layers to each other; asemiconductor chip disposed in the through-hole of the first insulatinglayers, and having an active surface with connection pads disposedthereon and an inactive surface opposing the active surface; anencapsulant encapsulating at least portions of the first connectionmember and the semiconductor chip; second insulating layers and secondredistribution layers alternately disposed on one side of thesemiconductor chip, the first insulating layers, and the firstredistribution layers; and second vias disposed in the second insulatinglayers, respectively, and electrically connecting the secondredistribution layers to each other, wherein the second redistributionlayers are electrically connected to the connection pads, one of thesecond redistribution layers includes sensor patterns recognizing afingerprint and protrudes from one of the second insulating layers, andanother of second redistribution layers includes an electromagnetic waveblocking pattern disposed between the semiconductor chip and the sensorpatterns, and the one of the second insulating layers, from which theone of the second redistribution layers including the sensor patternsprotrudes, is disposed between the semiconductor chip and the one of thesecond redistribution layers including the sensor patterns.
 18. Thefan-out semiconductor package of claim 17, wherein the secondredistribution layers include one layer disposed between theelectromagnetic wave blocking pattern and the semiconductor chip andelectrically connected to the connection pads of the semiconductor chip.19. A fan-out semiconductor package comprising: a first insulating layerhaving a through-hole; a semiconductor chip disposed in the through-holeof the first insulating layer, and having an active surface withconnection pads disposed thereon and an inactive surface opposing theactive surface; an encapsulant covering one of the inactive surface andthe active surface of the semiconductor chip, covering one of majorsurfaces of the first insulating layer, and extending continuously fromthe covered surface of the semiconductor chip and the covered majorsurface of the first insulating layer to fill at least a portion of thethrough-hole; a first upper redistribution layer, a first upperinsulating layer, a second upper redistribution layer, and a secondupper insulating layer sequentially disposed on the semiconductor chipand the first insulating layer; a lower redistribution layer disposedbetween the second upper insulating layer and the semiconductor chip;and a lower insulating layer, from which the lower redistribution layerprotrudes, disposed between the lower redistribution layer and thesemiconductor chip, wherein the first and second upper redistributionlayers and the lower redistribution layer are electrically connected tothe connection pads, the first and second upper redistribution layerseach include sensor patterns recognizing a fingerprint, and protrudefrom the first and second upper insulating layers, respectively, and thelower insulating layer is in physical contact with the semiconductorchip.
 20. The fan-out semiconductor package of claim 19, wherein thefirst and second upper redistribution layers, the lower redistributionlayer, the first and second upper insulating layers, and the lowerinsulating layer are disposed on a side of the active surface of thesemiconductor chip, and the fan-out semiconductor package furthercomprises another lower redistribution layer including anelectromagnetic wave blocking pattern disposed between the second upperredistribution layer and the lower redistribution layer.